Nearly free electron model and k·p method calculations of electronic band structure of wurtzite InN
نویسندگان
چکیده
The theoretical models for calculations of band structure of wurtzite InN have been studied. Several models including nearly free electron model, pseudopotional method, Tight-Binding moethod and k·p method will be discussed. Currently most InN epitaxial films grown on GaN or sapphire substrate have wurtzite structure. To study the symmetry properties of the electron wave function in wurtzite structure, a nearly free electron model calculation for GaN and InN are shown. Based on that, band structure calculated using k·p method near Γ point will be presented.
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